Quantum current modeling in nano-transistors with a quantum dot

Document Type: Research Paper

Abstract

Carbon quantum dots (CQDs) serve as a new class of ‘zero dimensional’ nanomaterial’s in the
carbon class with sizes below 10 nm. As light emitting nanocrystals, QDs are assembled from semiconductor
materials, from the elements in the periodic groups of II-VI, III-V or IV-VI, mainly thanks to impacts of quantum confinement QDs have unique optical properties such as brighter, highly photo and chemical stable, with broad absorption, narrow and symmetric emission spectrum. A substantial QDs feature is that their emission wavelength can be fine-tuned by adjusting their size and chemical composition. Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors, and fluorine because its sustainability is one of the best materials inter alia. The basis of Single electron devices (SEDs) is controllable single electron transfer between small conducting “islands”. In this paper transmission coefficient as a main transport factor need to be explored in this work the transmission coefficient and reflection coefficient for a potential barrier is investigated. All theoretical expressions such as height, width of potential barriers, distance between them and carrier property are included to have exact value of transmission coefficient. Then quantum current of double barrier single electron transistor (SET) is modeled and models current-voltage characteristic based on quantum transport and the electronic properties due to the dependence on structural parameter are analyzed.

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