Optical field enhancement factor of Silicon and indium phosphide nano-cavities

Document Type: Review Paper

Abstract

Nano cavities based on silicon and indium phosphide materials have been compared
in this study, considering field intensity enhancement factor. The results of FDTD based simulations declare that the Si nano-cavity improves confined optical field about 7.7 times higher than the InP based nano-cavity. The introduced dielectric nano-cavities support resonance wavelength at about λ=1.55 μm.

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